STB30NF10T4 N-channel 100V-0.045Ω-35A D2PAK

■ Producent: STMicroelectronics
■ Date code:
■ VDS Drain-source voltage (VGS = 0) : 100 V
■ VGS Gate- source voltage : ±20 V
■ RDSOn : 0,045Ω
■ Drain current (continuous) at TC = 25°C : 35 A
■ Drain current (continuous) at TC = 100°C : 25 A
■ Pulse width limited by safe operating area Drain current (pulsed) : 152 A
■ PTOT Total dissipation at TC = 25°C : 115 W
■ Peak diode recovery voltage slope : 28 V/ns
■ Single pulse avalanche energy : 275 mJ
■ VISO Insulation withstand voltage (DC) : 2000 V
■ Operating junction temperature : -55 to 175 °C
■ Obudowa : D2PAK

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